1995. 8. 28 1/2 semiconductor technical data KTA1277 epitaxial planar pnp transistor revision no : 0 high voltage application. dc-dc converter. low power switching regulator. features high breakdown voltage. low collector saturation voltage. high speed switching. maximum rating (ta=25 1 ) dim millimeters a b d e g h k l 1. emitter 2. collector 3. base p to-92l 7.20 max 5.20 max 2.50 max 0.60 max 1.27 1.70 max 0.55 max 14.00 0.50 0.35 min 0.75 0.10 4 f j m o q 25 1.25 1.50 0.10 max depth:0.2 123 b a c q k ff m m n n o h l j d c n g p hh e d h r s 12.50 0.50 r 1.00 s 1.15 max + _ + _ + _ electrical characteristics (ta=25 1 ) note : h fe classification o:60~120, y:100~200 characteristic symbol rating unit collector-base voltage v cbo -400 v collector-emitter voltage v ceo -400 v emitter-base voltage v ebo -7 v collector current i c -0.5 a collector power dissipation p c 1 w junction temperature t j 150 1 storage temperature t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cutoff current i cbo v cb =-400v - - -10 a emitter cutoff current i ebo v eb =-5v - - -10 collector base voltage v (br)cbo i c =-100 a -400 - - v collector emitter voltage v (br)ceo i c =-1ma -400 - - dc current gain h fe (note) v ce =-5v, i c =-100ma 60 - 200 - collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma - - -1 v base-emitter saturation voltage v be(sat) i c =-100ma, i b =-10ma - - -1.2 switching time turn on time t on i c =-100ma, r l =1.5k u i b1 =-10ma, i b2 =20ma v cc =-150v - - 1 s storage time t stg - - 4 fall time t f - - 1
1995. 8. 28 2/2 KTA1277 revision no : 0 c 0 collector current i (a) collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta collector current i (ma) 0 c 0 collector emitter voltage v (v) ce reverse bias safe operating area 10 dc current gain h 1 fe 100 -1 k -100 -10 -0.1 collector current i (ma) c 0 collector emitter voltage v (v) ce ce c i - v h - i safe operating area ce collector emitter voltage v (v) -1 -10 -100 -1k c -0.001 collector current i (a) -2 -4 -6 -8 -10 -0.1 -0.2 -0.3 -0.4 -0.5 i =-200ma b -180ma -160ma -140ma -120ma -100ma -80ma -60ma -40ma -20ma fe c -0.3 -1 -3 -30 -300 3 30 300 1k common emitter ta=25 c v =-5v ce c i /i =10 -10 -3 -0.3 -0.03 -300 -30 -3 -1 -0.3 c be(sat) v , v - i c collector current i (ma) -0.1 -10 -100 -1k -1 -0.01 saturation voltage -0.1 ce(sat) v , v (v) be(sat) ce(sat) b -100 -200 -300 -400 -500 -50 -100 -150 -200 -250 v , v ceo(sus) cex(sus) -3 -30 -300 -0.01 -0.1 -1 -10 -0.003 -0.03 -0.3 -3 i (pulse) max. c 10 s 1 00 s 1m s d c dissi pation s/b l imited lim ited v max. ceo(sus) p (w) 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0 1.2 v be(sat) ce(sat) v
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